| 型号/型号规格 | 分类 | 品牌 | 封装 | 批号 | 数量 | 询价 | ||
|---|---|---|---|---|---|---|---|---|
| R5402N102KD | 其他被动元件 |
RICOH/理光 |
SOT23-6 |
24+ |
30000 |
|||
| CM1051-DS/DT | ICM/创芯微 |
SOP16/TSSOP16 |
24+ |
30000 |
||||
| R5432V502BA | 电源IC |
RICOH/理光 |
SSOP24 |
24+ |
30000 |
|||
| BQ40Z50RSMR | 其他被动元件 |
TI/德州仪器 |
VQFN(RSM) |
23+ |
3000 |
|||
| BQ27542DRZT-G1 | 电源IC |
TI/德州仪器 |
SON(DRZ) |
23+ |
250 |
|||
| BQ34Z100PWR | 电源IC |
TI/德州仪器 |
TSSOP(PW) |
23+ |
2000 |
|||
| HY1710P | MOSFET或IGBT开关IC |
HUAYI/华羿微 |
TO-220FB-3L |
24+ |
15000 |
|||
| HY3008B | MOSFET或IGBT开关IC |
HUAYI/华羿微 |
TO-263-2L |
24+ |
15000 |
|||
| KS2211HB | MOS(场效应管) |
KWANSEMI/冠禹 |
SOP8 |
20+ |
1491 |
|||
| KS3400EA | MOS(场效应管) |
KWANSEMI/冠禹 |
SOT23 |
20+ |
2830 |
|||
| KS6210DB | MOS(场效应管) |
KWANSEMI/冠禹 |
to252 |
20+ |
1551 |
|||
| KS2268EA/3L | MOS(场效应管) |
KWANSEMI/冠禹 |
sot23 |
20+ |
1810 |
|||
| KS3210DB | MOS(场效应管) |
KWANSEMI/冠禹 |
TO252 |
20+ |
585 |
|||
| PT8202 |
|
电源IC |
迪普 |
SOT23 |
24+ |
3000 |
||
| CM1033-GS | 保护IC |
ICM/创芯微 |
SOP8 |
24+ |
32270 |
|||
| STM8S005K6T6CTR | 8位MCU |
ST/意法 |
LQFP32 |
23+ |
18795 |
|||
| STM32G070CBT6 | 32位MCU |
ST/意法 |
LQFP48 |
23+ |
38346 |
|||
| STM32L051C8T6 | 32位MCU |
ST/意法 |
LQFP48 |
23+ |
14845 |
|||
| STM32H750VBT6 | 32位MCU |
ST/意法 |
LQFP100 |
23+ |
1798 |
|||
| STM32F030F4P6TR | ST/意法 |
TSSOP20 |
23+ |
3406 |
||||
| GD32F103RCT6 | GD/兆易创新 |
LQFP64 |
23+ |
14620 |
||||
| S-8261DAA-M6T1U | 电源IC |
SEIKO/精工 |
SOT23-6 |
19+ |
2243 |
|||
| S-8261DAR-M6T1U | 电源IC |
SEIKO/精工 |
SOT23-6 |
19+ |
205 |
|||
| NCE01P18K | MOS(场效应管) |
NCE/新洁能 |
0 |
24+ |
60000 |
|||
| NCE0130KA | 低压MOS管 |
NCE/新洁能 |
0 |
24+ |
6000 |
|||
| NCE3400AY | 低压MOS管 |
NCE/新洁能 |
0 |
24+ |
6000 |
|||
| NCE2304 | 低压MOS管 |
NCE/新洁能 |
SOT-23 |
24+ |
420000 |
|||
| NCE6020AQ | NCE/新洁能 |
0 |
24+ |
6000 |
||||
| NCE4015S | 其他被动元件 |
NCE/新洁能 |
0 |
24+ |
24000 |
|||
| NCE6003XM | NCE/新洁能 |
0 |
24+ |
2000 |
去分享
深圳市雄达辉科技有限公司
主营产品 :
存储IC
|
逻辑IC
|
电源IC
|
贴片三极管
|
功率三极管
|
贴片二极管
|
功率二极管
|
智能功率模块IPM
|
IGBT模块
|
81632位MCU